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  unisonic technologies co., ltd ut2340 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 200 9 unisonic technologies co., ltd qw-r502-162.c p-channel enhancement mode ? description the utc ut2340 is p-channel enhancement mode power mosfet, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. used in commercial and industri al surface mount applications and suited for low voltage applications such as dc/dc converters. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT2340L-AE3-R ut2340g-ae3-r sot-23 s g d tape reel ? marking bc0 l: lead free g: halogen free
ut2340 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-162.c ? absolute maximum ratings (ta = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 3) i d -2 a pulsed drain current (note 1, 2) i dm -10 a total power dissipation p d 0.46 w junction temperature t j +150 c strong temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient (note 3) ja 250 c/w junction to case jc 75 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -20 v drain-source leakage current i dss v ds =-16v, v gs =0 v -1 a gate-source leakage current i gss v gs = 8 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv dss / t j i d =-250 a,referenced to 25c -15 mv/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -0.4 -0.9 -1.5 v v gs =-4.5v, i d =-2a 52 70 m ? v gs =-2.5 v, i d =-1.7a 78 110 m ? drain-source on-state resistance (note 2) r ds(on) v gs =-1.8v, i d =-1.2a 210 m ? dynamic parameters input capacitance c iss 600 pf output capacitance c oss 175 pf reverse transfer capacitance c rss v ds =-10v, v gs =0v, f=1.0mhz 80 pf switching parameters turn-on delay time (note 2) t d(on) 6 12 ns turn-on rise time t r 9 18 ns turn-off delay time t d(off) 31 50 ns turn-off fall time t f v dd =-5v,i d =-0.5a,v gs =-4.5v, r gen =6 ? 26 42 ns total gate charge (note 2) q g 8 11 nc gate-source charge q gs 1.3 nc gate-drain charge q gd v ds =-10v, v gs =-4.5v, i d =-2a 2.2 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage(note2) v sd v gs =0v, i s = -0.42a (note ) -0.7 -1.2 v maximum continuous drain-source diode forward current i s -0.42 a notes: 1. pulse width limited by t j(max) 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 270c/w when mounted on min.
ut2340 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-162.c ? typical characteristics drain-source current,-i d (a) normalized drain-source on- resistance,r ds(on) normalized drai n-source on- resistance,r ds(on) on-resistance,r ds(on) (ohm) drain current,-i d (a) reverse drain current,-i s (a)
ut2340 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-162.c ? typical characteristics(cont.) capacitance (pf) gate-source voltage,-v gs (v) power (w) drain current,-i d (a) normalized effective transient thermal resistance,r(t)
ut2340 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-162.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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